DRDO Develops Indigenous GaN-on-SiC Semiconductor Tech for Next-Gen EW Systems and Military Radars, Confirms MoD Annual Report
AI-summarised brief · reviewed before publication
India’s Defence Research and Development Organisation (DRDO) has successfully developed indigenous Gallium Nitride-on-Silicon Carbide (GaN-on-SiC) semiconductor technology, as confirmed in the Ministry of Defence’s 2025-2026 annual report. This breakthrough enables the production of advanced components for next-generation electronic warfare systems, military radars, and unmanned combat platforms. The core innovation is a compact 3.5 by 3 millimetre GaN microchip capable of outputting 30 watts of power at speeds 300 times faster than legacy silicon alternatives. Unlike traditional materials, GaN semiconductors withstand extreme thermal conditions and high voltages essential for modern combat systems. The Ministry verified the fabrication of X-band Monolithic Microwave Integrated Circuits and S-band power amplifiers. Developed by the Solid State Physics Laboratory, these components utilize homegrown 4-inch SiC wafers. Limited production lines are now operational at the Gallium Arsenide Enabling Technology Centre in Hyderabad, marking a significant step toward self-reliance in critical defence electronics.
💡 Why It Matters
- · This achievement neutralizes foreign export restrictions on sensitive semiconductor technology, securing India’s supply chain for critical radar and missile guidance systems.
- · By mastering domestic production, the nation eliminates reliance on costly imports, ensuring strategic autonomy for future aerospace and communication infrastructure.