SiC Lateral High Voltage Bi-Directional Field Effect Transistor
semiconductor-digest.com Sep 19, 2026

SiC Lateral High Voltage Bi-Directional Field Effect Transistor

AI-summarised brief · reviewed before publication

Researchers have unveiled a silicon‑carbide lateral high‑voltage bi‑directional field‑effect transistor that can conduct current and block voltage in both forward and reverse directions. The device replaces the conventional practice of pairing two separate SiC chips by embedding bidirectional capability within each unit cell, and adds a Schottky diode to improve conductivity. Its lateral architecture enables compact integration into complex power‑electronics ICs, targeting applications such as current‑source inverters, matrix converters, bidirectional EV chargers and renewable‑energy converters. By shrinking chip area and boosting manufacturing yield, the new FET promises higher efficiency, higher temperature operation and reduced system size compared with traditional SiC MOSFETs that block voltage only one way. The innovation simplifies thermal management and lowers parasitic inductance, enhancing performance in drives.

💡 Why It Matters

  • · By collapsing two chips into a single cell, designers can shrink inverter modules enough to fit tighter vehicle packages while meeting stringent efficiency targets.