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Broadband Distributed Amplifier for Data Centers, Measurement Systems and Sensors
semiconductor-digest.com Sep 24, 2026

Broadband Distributed Amplifier for Data Centers, Measurement Systems and Sensors

Curated by · TechCapsules ·

AI-summarised brief · reviewed before publication

Researchers at Germany’s Fraunhofer Institute for Applied Solid State Physics IAF have unveiled a monolithic microwave integrated circuit (MMIC) distributed amplifier that operates from 4 GHz to 420 GHz with 11 ± 2 dB gain. The device uses 20‑nm gate length InGaAs‑on‑Si high‑electron‑mobility transistors, replacing earlier 35‑nm GaAs‑based chips. Measured noise figures reach 2.8–7.7 dB up to 202 GHz, and saturated output power lies between 6 and 8 dBm. The amplifier’s broadband, low‑noise, high‑power profile targets optical‑electrical interfaces in next‑generation data centers, high‑precision measurement equipment, and high‑resolution radar sensors. Fraunhofer IAF will showcase functional samples at European Microwave Week in London (Oct 4‑9 2026), with live demonstrations by partner FormFactor, Inc. The work was detailed in a June 2025 IEEE Microwave and Wireless Technology Letters paper for industry adoption globally.

💡 Why It Matters

  • · By pushing usable bandwidth past 400 GHz on a silicon‑compatible platform, the amplifier enables data‑center interconnects and sensor arrays to scale without resorting to exotic substrates, accelerating deployment of AI‑driven infrastructure.
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