JEOL Launches Low-Angle Ion-Milling SEM for Advanced-Chip Failure Analysis
AI-summarised brief · reviewed before publication
JEOL Ltd. announced that its new low‑angle ion‑milling scanning electron microscope, named HAXIS, will go on sale on October 5, 2026. The instrument merges JEON’s passive voltage contrast (PVC) detection with a proprietary low‑angle argon ion‑milling delayering process to produce a flat, minimally damaged sample surface for semiconductor failure analysis. By preserving surface integrity, HAXIS delivers clear, reproducible PVC images that locate electrical anomalies in advanced chips without the probing artefacts that can alter measurements. The system’s integrated workflow—combining LIM delayering, SEM imaging and PVC analysis—aims to shorten the turnaround from defect detection to root‑cause identification, supporting QTAT analysis. JEOL cites reduced running costs from the argon gas and improved sample preparation as key advantages for the increasingly complex, nanoscale device market.
💡 Why It Matters
- · Faster, more accurate defect localization lets chip makers cut costly debug cycles, accelerating time‑to‑market for next‑generation processors.