semiconductor-digest.com
Nov 7, 2026
Hanyang University Researchers Gain Control Over Where Semiconductor Crystals First Form
AI-summarised brief · reviewed before publication
Hanyang University researchers introduced etching‑flux‑mediated single‑centred nucleation (EF‑SCN) to direct two‑dimensional MoS₂ crystal growth at precise sites. By surrounding patterned regions with hafnium oxide that releases oxygen at 750 °C, the method suppresses nucleation at boundaries, enabling over 99 % single‑crystal yield across 400 sites on a 2‑cm substrate. The technique also works at lower temperatures using zirconium dioxide, producing uniform triangular domains as small as 430 °C. Devices fabricated from these crystals reached 117 cm² V⁻¹ s⁻¹ mobility with minimal variation.
💡 Why It Matters
- · Precise nucleation control unlocks scalable, high‑performance 2‑D semiconductor devices, moving beyond trial‑and‑error growth and paving the way for dense, reliable electronics.
