Mitsubishi Electric to Ship 5th-generation SiC-MOSFET Bare Die Samples
semiconductor-digest.com Jun 5, 2026

Mitsubishi Electric to Ship 5th-generation SiC-MOSFET Bare Die Samples

AI-summarised brief · reviewed before publication

Mitsubishi Electric Corporation will start shipping samples of its new 5th-generation silicon carbide metal-oxide-semiconductor field-effect transistors in late June. The SiC-MOSFETs are designed for use in inverters for electric vehicles and feature a proprietary trench structure, achieving low on-resistance approximately 25% lower than existing products. The products will be displayed at various exhibitions, including PCIM Expo & Conference 2026. Mitsubishi Electric's 5th-generation SiC-MOSFETs will contribute to the performance and miniaturization of xEV inverters and eAxles, extending the range and improving power efficiency of xEVs with stable quality and durability.

💡 Why It Matters

  • · Enhanced SiC-MOSFET performance boosts electric vehicle range and efficiency.
  • · Mitsubishi Electric's proprietary manufacturing technology ensures stable quality and durability in xEV inverters and eAxles.