New Transistor Brings High Voltage to Microchip Scale
AI-summarised brief · reviewed before publication
Researchers at EPFL’s Power and Wide-band-gap Electronics Research Lab have developed a new gallium nitride transistor called the intrinsic polarization superjunction, or iPSJ. This chip-sized device, built on a low-cost silicon base, withstands nearly 4 kilovolts before breaking down, setting a record for this technology. By exploiting GaN’s natural polarization effect, the design balances positive and negative charges, preventing the electric field concentration that typically causes premature failure in conventional transistors. The iPSJ maintains low resistance, reducing energy losses released as heat. Published in Nature Electronics, the doping-free design offers robust performance across wide temperature ranges. This innovation addresses critical limitations in high-voltage power electronics, enabling more efficient power conversion for AI data centers, renewable energy systems, electric vehicles, and industrial applications. The team aims to combine this approach with multi-channel conduction methods to further minimize resistance and energy loss in next-generation power electronics.
💡 Why It Matters
- · Eliminating chemical doping solves the temperature sensitivity problem that plagues current high-voltage gallium nitride devices.
- · This breakthrough allows power electronics to operate reliably under extreme thermal stress, a critical requirement for the dense, high-power environments of modern AI infrastructure and electric vehicle systems.