AMD’s Su engages Samsung chief over memory supplies

thearabianpost.com Oct 8, 2026

AMD’s Su engages Samsung chief over memory supplies

Curated by Shubham · TechCapsules · Oct 8, 2026

AI-summarised brief · reviewed before publication

Advanced Micro Devices chief executive Lisa Su met Samsung Electronics’ Device Solutions vice‑chairman Young Hyun Jun in Seoul on Wednesday, seeking tighter cooperation on memory and foundry capacity as AI‑driven demand strains supplies. The discussion, which also included SK Hynix CEO Kwak Noh‑jung, focused on high‑bandwidth memory (HBM), broader DRAM allocations and possible contract‑chip manufacturing partnerships. Su emphasized Samsung and SK Hynix as “critical partners” for AMD’s data‑center roadmap and urged rapid expansion of memory output. AMD, confronting tight HBM and DRAM markets, is extending its capacity planning horizon to three‑to‑five years, aiming to boost AI‑chip supply by 2027. A March memorandum of understanding already names Samsung as the primary HBM4 supplier for AMD’s upcoming Instinct MI455X GPU and for next‑gen EPYC processors.

💡 Why It Matters

· Access to Samsung’s HBM4 gives AMD a rare supply edge in a market where memory bandwidth limits AI performance.
· That advantage could narrow Nvidia’s lead in data‑center accelerators.

Capsules Semiconductors

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TSMC supplier Gudeng launches operations at Arizona plant

Gudeng Precision Industrial Co. inaugurated its Arizona plant on Tuesday, marking the company’s first production base in the United States and expanding its footprint beyond Taiwan, China, and South Korea. The ceremony, led by chairman Bill Chiu, highlighted Arizona’s emerging semiconductor‑aerospace cluster, bolstered by TSMC’s advanced wafer fab and planned packaging facilities. Gudeng will launch an initial parts‑processing line to serve U.S. customers and grow alongside its partners, including TSMC. The move follows Gudeng’s 2023 ground‑breaking of a plant in Japan’s Fukuoka Prefecture and reflects a broader trend of Taiwanese tech firms establishing operations in Arizona, such as United Integrated Services and Foxlink International. Chiu cited the state’s talent pool and long‑term government support for advanced manufacturing as key incentives.

💡 Gudeng’s Arizona launch deepens the U.S. semiconductor supply chain, tying local production directly to TSMC’s ecosystem and reducing reliance on overseas logistics.

semiconductor-digest.com · Oct 8

MintNeuro Raises $5M to Scale Purpose-Built Chip Platform for Neural Devices and…

MintNeuro, a UK‑based semiconductor firm, secured $5 million in funding to accelerate the commercial rollout of its purpose‑built neural chip platform. The round, led by Odyssey Ventures and joined by 33East, JSK Investments, Alumni Ventures, Empirical Ventures, Jumpspace Ventures and early backers, will expand engineering, grow international sales, and deliver pre‑release silicon to partners. The company has already supplied working chips to Motif Neurotech and Amber Therapeutics, and its modular architecture promises smaller, lower‑power neural devices for BCIs, neuromodulation, and sensory prostheses.

💡 The investment signals a tipping point for neurotechnology, enabling faster, safer device development and potentially shortening the path from research to clinical application. By providing a standardized, high‑performance chip stack, MintNeuro could reduce the time and cost that have historically stalled the adoption of brain‑computer interfaces and related therapies.

semiconductor-digest.com · Oct 8

Wolfspeed Secures Conditional $1.5B U.S. Commitment for Domestic SiC Production

Wolfspeed, Inc. received a conditional loan commitment from the U.S. Department of War’s Office of Strategic Capital for up to $1.5 billion of long‑term financing. The funds are earmarked to expand domestic silicon‑carbide (SiC) material production and wide‑bandgap power‑device manufacturing, while also upgrading gallium‑nitride (GaN) epitaxy capabilities for communications and electronic‑warfare systems. The agreement includes provisions for developing radiation‑hardening technology for current SiC and future GaN products. The loan, structured as a senior secured delayed‑draw term facility with a 30‑year tenor, would require Wolfspeed to issue warrants covering up to 7.5 % of its fully diluted equity. Completion depends on due diligence, definitive agreements and multiple regulatory approvals.

💡 The financing could anchor a U.S. supply chain for high‑performance semiconductors critical to defense and emerging AI applications, reducing reliance on foreign sources.

investmentmonitor.ai · Oct 8

Samsung Electro-Mechanics plans Won2.51tn Vietnam investment

Samsung Electro‑Mechanics will invest about Won 2.51 trillion ($1.88 billion) in its Vietnam subsidiary to expand production of flip‑chip ball grid array (FCBGA) semiconductor substrates, part of a total Won 6.78 trillion expansion programme that also adds Won 4.27 trillion for new capacity at its Sejong plant in South Korea. The Vietnam facility is slated for construction completion and operational launch by June 2030 and will serve as a high‑volume manufacturing hub for international customers, aiming to improve efficiency and supply continuity as demand for advanced substrates rises. The Sejong site, described as the company’s largest single‑product investment, will focus on complex, high‑value‑added FCBGA products for AI servers and automotive electronics, with mass production expected from September 2028. Global customer financing and mid‑ to long‑term volume commitments are cited to mitigate investment risk and support factory utilisation.

💡 The Vietnam plant will anchor Samsung Electro‑Mechanics’ push into fast‑growing AI and high‑performance computing markets, securing a stable supply chain for critical substrate components.

eejournal.com · Oct 8

Keysight and Research Institutions Simplify Testing of Next-Generation Semiconductor Devices

Keysight Technologies partnered with the University of Glasgow, the UK National Physical Laboratory and MPI Corporation to create a single‑sweep broadband test system for sub‑terahertz semiconductor devices. The collaboration demonstrated continuous on‑wafer measurement of indium‑phosphide high‑electron‑mobility transistors from near DC to 250 GHz using Keysight’s PNA‑X vector network analyzer, a 250 GHz frequency extender and a precision source/measure unit, together with MPI’s probing hardware and NPL’s metrology methods. The setup required only one probe touchdown, eliminating multiple calibrations and providing consistent S‑parameter data across the full frequency span. Researchers say the approach simplifies data collection for millimeter‑wave and sub‑THz transistor modeling, accelerating development of next‑generation chips. Effort also validated system’s filtering and power calibration, ensuring signal purity at probe tip.

💡 Collapsing a multi‑step measurement workflow into a single probe touchdown speeds prototype validation, shortening time‑to‑market for sub‑THz chips.

eejournal.com · Oct 8

Renesas Expands GaN Portfolio with First Low-Voltage GaN FETs for AI Data…

Renesas Electronics announced the launch of its first low‑voltage gallium‑nitride (GaN) power transistors, a family of 100 V enhancement‑mode FETs including part numbers RTP100E005G1FL, RTP100E2P6G1FL, RTP100E1P8G1FL‑DSC and RTP100E1P2G1FL‑DSC. The devices promise ultra‑fast switching and superior thermal performance for efficiency‑critical, high‑power‑density markets such as AI‑driven data centers, humanoid robotics, factory automation, industrial motor drives, power tools and solar micro‑inverters. Renesas claims industry‑leading hard‑ and soft‑switching figure‑of‑merit improvements, with up to 35 % lower hard‑switching and 63 % lower soft‑switching FOM versus comparable GaN parts. The transistors retain a silicon‑compatible footprint, facilitating integration into existing designs. Their performance enables megahertz‑class switching in emerging 800 VDC and 48 V bus architectures, reducing magnetics size, switching losses and cooling demands.

💡 By enabling higher‑frequency conversion in next‑generation power architectures, Renesas’ low‑voltage GaN FETs can shrink system size and cut energy waste in AI data centers and advanced robotics.