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Broadband Distributed Amplifier for Data Centers, Measurement Systems and Sensors
Researchers at Germany’s Fraunhofer Institute for Applied Solid State Physics IAF have unveiled a monolithic microwave integrated circuit (MMIC) distributed amplifier that operates from 4 GHz to 420 GHz with 11 ± 2 dB gain. The device uses 20‑nm gate length InGaAs‑on‑Si high‑electron‑mobility transistors, replacing earlier 35‑nm GaAs‑based chips. Measured noise figures reach 2.8–7.7 dB up to 202 GHz, and saturated output power lies between 6 and 8 dBm. The amplifier’s broadband, low‑noise, high‑power profile targets optical‑electrical interfaces in next‑generation data centers, high‑precision measurement equipment, [...]