imec Demonstrates Quantum Dot Qubit Device Using High NA EUV
thequantuminsider.com May 20, 2026

imec Demonstrates Quantum Dot Qubit Device Using High NA EUV

AI-summarised brief · reviewed before publication

imec has demonstrated a quantum dot qubit device using High NA EUV lithography, a world first. The device has gaps as small as 6 nanometers, improving qubit coupling and scalability. This achievement supports the use of CMOS-compatible semiconductor manufacturing for large-scale quantum computing hardware. The silicon quantum dot spin qubit device is considered a promising candidate for industrial scaling. imec's demonstration marks a milestone toward the industrial scaling of more reliable qubits. The company has built a functioning network of qubits with minimal gaps, enabling the integration of millions of quantum bits onto a single chip.

💡 Why It Matters

  • · High NA EUV lithography enables precise patterning of silicon quantum dot qubits, increasing coupling strength between neighboring quantum dots.
  • · This feat brings quantum computing closer to large-scale, manufacturable systems.