TechCapsules

AI-summarised brief · reviewed before publication

Lam Research and imec have deepened their strategic partnership to accelerate the manufacturability of next‑generation three‑dimensional (3D) integration and high‑numerical‑aperture (NA) extreme ultraviolet (EUV) lithography. The expanded collaboration adds two joint R&D thrusts: developing processes for advanced 3D integration—including thick dielectric deposition, asymmetric stress compensation, bevel deposition, plasma dicing, and high‑aspect‑ratio memory structures—and advancing Lam’s Aether dry‑resist platform for high‑NA EUV patterning. Leveraging Lam’s deposition and etch expertise with imec’s integration and high‑NA EUV facilities, the teams aim to move innovations such as charge‑trap memory materials, low‑resistivity interconnects, and sub‑20 nm ruthenium direct‑metal etch from lab to high‑volume production. Early results have shown single‑exposure patterning of sub‑20 nm interconnects with 100 % electrical yield, underscoring the partnership’s potential to meet AI‑driven performance demands.