Mitsubishi Electric to Ship 5th-generation SiC-MOSFET Bare Die Samples
AI-summarised brief · reviewed before publication
Mitsubishi Electric Corporation will start shipping samples of its new 5th-generation silicon carbide metal-oxide-semiconductor field-effect transistors in late June. The SiC-MOSFETs are designed for use in inverters for electric vehicles and feature a proprietary trench structure, achieving low on-resistance approximately 25% lower than existing products. The products will be displayed at various exhibitions, including PCIM Expo & Conference 2026. Mitsubishi Electric's 5th-generation SiC-MOSFETs will contribute to the performance and miniaturization of xEV inverters and eAxles, extending the range and improving power efficiency of xEVs with stable quality and durability.
💡 Why It Matters
- · Enhanced SiC-MOSFET performance boosts electric vehicle range and efficiency.
- · Mitsubishi Electric's proprietary manufacturing technology ensures stable quality and durability in xEV inverters and eAxles.