PolyU Develops Quantum-Tunnelling Field-Effect Transistor
AI-summarised brief · reviewed before publication
PolyU researchers, led by Prof. Jianhua Hao, have fabricated a two‑dimensional tunnelling field‑effect transistor (TFET) using a Bi/InSe heterostructure grown by pulsed laser deposition. The device surpasses the 60 mV/decade Boltzmann limit, achieving sub‑60 mV subthreshold swing over six orders of current and operating with a 160 mV gate voltage at room temperature on silicon wafers. It delivers microamp‑per‑micrometer output currents and high ON/OFF ratios, demonstrating compatibility with existing CMOS processes and scalability for AI‑accelerator chips.
💡 Why It Matters
- · The TFET’s ability to break the thermionic barrier while maintaining high output current signals a practical path toward ultra‑low‑power, high‑performance processors, directly addressing the energy constraints that have stalled Moore’s Law.