Toshiba Launches 3300V SiC MOSFET Module with High Surge Current Capability that Helps Improve Reliability of Industrial Equipment
AI-summarised brief · reviewed before publication
Tokyo‑based Toshiba Electronic Devices & Storage Corp. introduced the IX800FXF2YMS4, a dual 3300‑volt silicon‑carbide MOSFET module rated for 800 A continuous drain current. The device incorporates the company’s third‑generation SiC chips and delivers a surge‑current I²t capability of 300 kA²·s, allowing it to withstand abnormal current spikes in railway traction inverters, renewable‑energy converters and industrial motor drives. Its low on‑state voltage of 1.4 V and modest switching losses (185 mJ turn‑on, 175 mJ turn‑off) reduce conduction and switching heat, enabling smaller cooling systems and higher overall efficiency. Packaged in Toshiba’s iXPLV™ format with silver‑sinter bonding, the module tolerates channel temperatures up to 175 °C, expanding the firm’s SiC portfolio to four products for compact, reliable power equipment. The launch positions Toshiba to meet efficiency standards across markets.
💡 Why It Matters
- · Its high surge‑current tolerance in a compact package lets converters shrink, accelerating the rollout of denser, more reliable electrified rail and renewable‑energy infrastructure.