Toshiba Launches 3300V SiC MOSFET Module with High Surge Current Capability that Helps Improve Reliability of Industrial Equipment
newswire.co.kr Sep 27, 2026

Toshiba Launches 3300V SiC MOSFET Module with High Surge Current Capability that Helps Improve Reliability of Industrial Equipment

AI-summarised brief · reviewed before publication

Tokyo‑based Toshiba Electronic Devices & Storage Corp. introduced the IX800FXF2YMS4, a dual 3300‑volt silicon‑carbide MOSFET module rated for 800 A continuous drain current. The device incorporates the company’s third‑generation SiC chips and delivers a surge‑current I²t capability of 300 kA²·s, allowing it to withstand abnormal current spikes in railway traction inverters, renewable‑energy converters and industrial motor drives. Its low on‑state voltage of 1.4 V and modest switching losses (185 mJ turn‑on, 175 mJ turn‑off) reduce conduction and switching heat, enabling smaller cooling systems and higher overall efficiency. Packaged in Toshiba’s iXPLV™ format with silver‑sinter bonding, the module tolerates channel temperatures up to 175 °C, expanding the firm’s SiC portfolio to four products for compact, reliable power equipment. The launch positions Toshiba to meet efficiency standards across markets.

💡 Why It Matters

  • · Its high surge‑current tolerance in a compact package lets converters shrink, accelerating the rollout of denser, more reliable electrified rail and renewable‑energy infrastructure.