U.S. Government Selects Navitas to Develop Next-Generation 10 kV SiC Power Semiconductors
AI-summarised brief · reviewed before publication
Navitas Semiconductor has been awarded the U.S. Army’s ALATTIS program to create a domestic manufacturing process for ultra‑high‑voltage (≥10 kV) silicon‑carbide (SiC) insulated‑gate bipolar transistors (IGBTs) and associated PiN diodes. After a competitive review, the Army selected Navitas for its proven UHV SiC track record, defense‑grade reliability, and a resilient U.S.–based supply chain. The ALATTIS prototype project, funded by the Army Research Laboratory and supported by the Joint Experimentation and Technology Accelerator, will iterate design, fabrication, and testing to validate the novel 10 kV SiC IGBT technology. Navitas’ GeneSiC portfolio already spans 650 V to 6.5 kV devices, and the award expands its leadership from MOSFETs to next‑generation IGBTs for critical defense and infrastructure systems.
💡 Why It Matters
- · Delivering a home‑grown 10 kV SiC IGBT removes a strategic technology gap, giving the U.S.
- · military and critical grids a secure, high‑power semiconductor source.