Infineon Processes Functional Power Devices on 300mm SiC Wafers

semiconductor-digest.com Nov 10, 2026

Infineon Processes Functional Power Devices on 300mm SiC Wafers

Curated by Shubham · TechCapsules · Nov 10, 2026

AI-summarised brief · reviewed before publication

Infineon Technologies AG announced that its Villach, Austria fab has produced functional power devices on 300 mm silicon‑carbide (SiC) wafers, marking the first full‑scale semiconductor‑manufacturing run of this size for SiC. The breakthrough was achieved using existing silicon‑process equipment, allowing a 2.3‑fold increase in chip count per wafer compared with the traditional 200 mm format. CEO Jochen Hanebeck highlighted the milestone as a step toward industrial‑scale SiC production and a broader portfolio that includes silicon, gallium‑nitride and SiC. Infineon plans to coordinate 300 mm SiC ramp‑up with customers while continuing its 200 mm roadmap, and it has also validated a “Cold Split” wafer‑separation method that reduces material loss. The company will showcase the first processed 300 mm SiC wafer at electronica 2026 in Munich.

💡 Why It Matters

· By leveraging 300 mm wafers, Infineon can dramatically lower the cost per SiC device, accelerating the adoption of high‑efficiency power conversion in electric vehicles, renewable energy and AI data centers.
· This positions the firm to dominate the emerging wide‑bandgap market ahead of rivals still confined to smaller wafers.

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