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Navitas Unveils Next-Generation Ultra-High-Voltage SiC Power Module
semiconductor-digest.com Oct 22, 2026

Navitas Unveils Next-Generation Ultra-High-Voltage SiC Power Module

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AI-summarised brief · reviewed before publication

Navitas Semiconductor announced a new ultra‑high‑voltage SiC power module family, the G4H08MT23GB4, rated at 2300 V and built on the SiCPAK™ form factor. The full‑bridge devices achieve a class‑leading on‑resistance of 8 mΩ thanks to the fourth‑generation GeneSiC™ Trench‑Assisted Planar™ architecture. Enhanced thermal management comes from an aluminum‑nitride active‑metal‑braze substrate, epoxy‑resin potting and optional pre‑applied thermal interface material, while press‑fit pins double current capacity. Navitas qualified the modules to its AEC‑Plus reliability benchmark, extending high‑temperature, high‑voltage and power‑cycling tests beyond JEDEC standards. Target applications include solid‑state transformers for AI data‑center racks, grid‑scale battery storage, solar inverters and megawatt EV chargers, positioning the parts as a core building block for emerging medium‑voltage power architectures. The launch expands Navitas’ 2300 V and 3300 V SiC portfolio.

💡 Why It Matters

  • · By delivering the lowest on‑resistance in a SiCPAK package, the module lets designers shrink solid‑state transformers, cutting system size and cooling needs for AI‑driven data centers.
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